Thanks to visit codestin.com
Credit goes to www.scribd.com

Scribd
Upload
195 views2 pages

Isc N-Channel MOSFET Transistor 75N08: INCHANGE Semiconductor Product Specification

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 75N08. Key features include a drain current of 75A at 25°C and a drain-source on-resistance of 0.015 ohms or less. It is suitable for use as a primary switch in high-efficiency DC-DC converters and applications requiring low gate drive. Applications include solenoid drivers, DC motor control, DC-DC converters, and automotive uses.

Uploaded by

mateus santos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
195 views2 pages

Isc N-Channel MOSFET Transistor 75N08: INCHANGE Semiconductor Product Specification

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 75N08. Key features include a drain current of 75A at 25°C and a drain-source on-resistance of 0.015 ohms or less. It is suitable for use as a primary switch in high-efficiency DC-DC converters and applications requiring low gate drive. Applications include solenoid drivers, DC motor control, DC-DC converters, and automotive uses.

Uploaded by

mateus santos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 75N08

FEATURES
·Drain Current –ID= 75A@ TC=25℃
·Drain Source Voltage-
: VDSS= 80V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.015Ω(Max)

DESCRIPTION
Suitable as primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low gate
drive requirements .

APPLICATIONS
·Solenoid and relay drivers
·DC motor control
·DC-DC converters DC
·Automotive environment

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 80 V

VGS Gate-Source Voltage-Continuous ±20 V

ID Drain Current-Continuous 75 A

IDM Drain Current-Single Pluse (tp≤10μs) 300 A

PD Total Dissipation @TC=25℃ 137 W

TJ Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 0.91 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.cn 1
isc&iscsemi is registered trademark.

PDF pdfFactory Pro www.fineprint.cn


INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 75N08

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 80 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 37.5A 0.015 Ω

IGSS Gate-Body Leakage Current VGS= ±20V; VDS= 0 ±100 nA

VDS= 80V; VGS= 0 1.0


IDSS Zero Gate Voltage Drain Current μA
VDS= 60V; VGS= 0; Tj= 125℃ 10

VSD Forward On-Voltage IS= 75A; VGS=0 1.4 V

isc website：www.iscsemi.cn 2
isc&iscsemi is registered trademark.

PDF pdfFactory Pro www.fineprint.cn

You might also like