GENERATION OF SOLAR CELL MATERIALS
Fossil fuels pricing
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Less than 10% of the top
SOLAR CELL surface area
Si (2 -5 m)
Si (100 - 350 m)
I-V Characteristics of a solar cell
V m Im Vm Im
Fill Factor = ----------- Efficiency = ------------ x 100%
Voc Isc Pin x area
Equivalent circuit of a solar cell
SOLAR PANEL
SOLAR CELL SOLAR MODULE
SOLAR ARRAY
Balance of system
Solar cars
Solar vehicle
Points to consider when designing a solar car:
Stream lined design
1 - The car should be designed in order to maximize the area exposed to sun
light in order to achieve maximum power.
2 - The car shape should be so-called an aerodynamic shape in order to
achieve minimum wind resistance, or the so-called drag force.
3 - The car should be as light as possible, because the power expected from
the solar cells is not that much. In addition, most of this power will be utilized to
overcome friction and drag.
BARALIKADU
SILICON SOLAR CELLS
Second most abundant element available on the earth’s crust
after oxygen.( 26%)
Safe to handle
Single phase behaviour
High degree of chemical stability with an extremely low vapour
pressure,
Technology has been mastered for the past 10 decades.
SILICON
SILICON BULK SILICON THIN FILM
MONOCRYSTALLINE
AMORPHOUS
POLYCRSTALLINE
PROTOCRYSTALLINE
RIBBON NANOCRYSTALLINE
Creating Silicon Wafers
Growing of Silicon Ingot
Czochralski Process
Drawing of Silicon Ingot
Silicon Ingots & Wafers
Creating PV Cells
Problems in Silicon
Crystalline silicon has a market share of 86%
but
It is a indirect band gap material
It has low absorption coefficient
For 90% of light absorption a thickness of
• 1 micron of GaAs is enough
• but 100 micron Si is required
Amorphous Si is a direct band gap material
This is because silicon technology has already been developed
originally for transistors and later for integrated circuits
Requirements for ideal solar cell material
• Band gap between 1.1 and 1.7 eV
• Direct band gap structure
• Consisting of readily available, non toxic materials
• Easy reproducible deposition technique suitable for
large area production
• Good photovoltaic conversion efficiency
• Long term stability
CIGS SOLAR CELLS
20.3% in Cell Efficiency
14% IN Module efficiency
Thin Film CIGS Solar Cells
Efficiency
Area Area VOC JSC FF Efficiency
(cm2) (cm2) (V) (mA/cm 2) (%) (%) Comments
CIGSe/CdS/Cell
CIGSe 0.410 0.697 35.1 79.52 19.5 NREL, 3-stage process
CIGSe/ZnS (O,OH)
CIGSe 0.402 0.67 35.1 78.78 18.5 NREL, Nakada et al
Cu(In,Ga)S2/CdS
CIGS 0.409 0.83 20.9 69.13 12.0 Dhere, FSEC
Cu(In,Al)Se2/CdS
CIAS – 0.621 36.0 75.50 16.9
IEC, Eg = 1.15eV
CTO/ZTO/CdS/CdTe
CdTe 1.03 0.845 25.9 75.51 16.5
NREL, CSS
CdTe – 0.840 24.4 65.00 13.3 SnO2/Ga2O3/CdS/CdTe
IEC, VTD
CdTe 0.16 0.814 23.56 73.25 14.0 ZnO/CdS/CdTe/Metal
U. of Toledo, sputtered
CIGS Device Structure
ZnO, ITO
2500 Å
CdS
700 Å
CIGS
1-2.5 µm
Mo
0.5-1 µm
Glass,
Metal Foil,
Plastics
CIGS
Efficiency Losses in Solar
Cell
1 = Thermalization loss
2 and 3 = Junction and contact voltage loss
4 = Recombination loss
More work from the solar spectrum with:
– more band gaps
• tandems, intermediate bands, spectral splitting
– more work per photon
• “hot carrier” solar cells and impact ionisation
– redistributing photons
• spectral up- and down- conversion
Multiple bandgaps
GaInP/GaAs/Ge ( η = 34%)
Spectral splitting
Intermediate Band gap semiconductors
Hot carrier solar cells
UP-CONVERTER
DOWN CONVERTER
CuInSe2 thin films prepared using CSVT Technique
R.Balasundaraprabhu et al
CdSeTe thin films deposited by Hot wall technique
N.Muthukumarasamy et al
CdSe0.6Te0.4 film of
thickness 1545 Å
CuInGaSe2 thin films prepared
using electron beam gun
deposition technique
M.Venkatachalam et al
CuInSe2 thin films deposited using Chemical Bath Deposition Technique
M.Dhanam et al
Sputter deposited ITO/Si interface studies
5,00E-03 2,5
100
-2
4,50E-03 10
90 as-deposited
o
4,00E-03 2 100 C
80
o
-3 200 C
3,50E-03 10
resistivity r (ohm cm)
70 o
300 C
roughness ( nm )
o
Transmittance(%)
3,00E-03 1,5 60 400 C
Current, A
60 nm
-4
2,50E-03 50 10
75 nm
40
2,00E-03 1
30 100 nm -5
1,50E-03 10
20
1,00E-03 0,5
10
300 nm -6
5,00E-04
10
0
0 500 1000 1500 2000 2500 3000
0,00E+00 0
25 100 200 300 400 Wavelength(nm) -7
10
Annealing temperature(°C) -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
Voltage, V
20
1.6x10 as-deposited
o 0.020
100 C
20 o as-deposited (interface region)
1.4x10 200 C
o
as-deposited (deeper region)
300 C o
20 0.015 300 C (interface region)
1.2x10 o
400 C
20
DLTS signal, pF
-2
1.0x10
1/C , F
0.010
2
19
8.0x10
19
6.0x10 0.005
19
4.0x10
19 0.000
2.0x10
0.0
-10 -8 -6 -4 -2 0 -0.005
50 100 150 200 250
Voltage, V
Temperature, K
ALD deposited ITO thin films
Si
Intensity(a.u)
(222)
Si
annealed at 300 ˚C
asdeposited
20 30 40 50 60 70 80
2θ
(a) External quantum efficiency (EQE) for the new GaInP, CdTe, CZTS and
perovskite cell as well as for the CdTe module and the organic submodule
results in this issue,
EQE for two new III–V multijunction cells
ION IMPLANTATION
MOCVD
SPUTTERING
THERMAL EVAPORATOR E-B GUN EVAPORATOR
Ellipsometer
Diffusion furnace
Chemical etching bench
Probe station for I-V
measurement
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