RF2312

0 LINEAR GENERAL PURPOSE AMPLIFIER

RoHS Compliant & Pb-Free Product

Typical Applications
• CATV Distribution Amplifiers • Laser Diode Driver
• Cable Modems • Return Channel Amplifier
• Broadband Gain Blocks • Base Stations

Product Description
-A-
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an 0.160 0.018 0.010
0.152 0.014 0.004
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
0.200 0.050
an easily cascadable 75Ω gain block. The gain flatness of 0.192
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications. 0.248 0.059
Other applications include IF and RF amplification in 0.232 0.057

wireless voice and data communication products operat- 8° MAX

0° MIN 0.0100
ing in frequency bands up to 2500MHz. The device is 0.0076
self-contained with 75Ω input and output impedances, 0.0500
and requires only two external DC biasing elements to 0.0164
NOTES:
operate as specified. 1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).

Optimum Technology Matching® Applied Package Style: SOIC-8

Si BJT 9 GaAs HBT GaAs MESFET
Si Bi-CMOS SiGe HBT Si CMOS Features
InGaP/HBT GaN HEMT SiGe Bi-CMOS
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 3.8dB Noise Figure
RF IN 1 8 RF OUT • +20dBm Output Power

GND 2 7 GND
• Single 5V to 12V Positive Power Supply

GND 3 6 GND

GND 4 5 GND Ordering Information

RF2312 Linear General Purpose Amplifier
RF2312 PCBA Fully Assembled Evaluation Board - 75Ω
RF2312 PCBA Fully Assembled Evaluation Board - 50Ω

RF Micro Devices, Inc. Tel (336) 664 1233

7628 Thorndike Road Fax (336) 664 0454
Functional Block Diagram Greensboro, NC 27409, USA http://www.rfmd.com

Rev C6 051025 3-1

 RF2312
Absolute Maximum Ratings
Parameter Rating Unit Caution! ESD sensitive device.
Input RF Power +18 dBm
Output Load VSWR 20:1 RF Micro Devices believes the furnished information is correct and accurate
Ambient Operating Temperature -40 to +85 °C at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
Storage Temperature -40 to +150 °C make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Specification
Parameter Unit Condition
Min. Typ. Max.
T=25°C, VCC =9V, Freq = 900 MHz,
Overall (50Ω) RC =30Ω, 50Ω System, PIN =-4dBm
Frequency Range DC to 2500 MHz 3dB Bandwidth
Gain 14.5 15.1 dB
Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30 to +70 °C
4.2 4.8 dB From 300MHz to 1000MHz, -30 to +70 °C
Input VSWR 1.7:1 2:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 1.4:1 2:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3 +40 +42 dBm At 100MHz
Output IP3 +33 +36 dBm At 500MHz
Output IP3 +30 +33 dBm At 900MHz
Output P1dB +21 +22 dBm At 100MHz
Output P1dB +20 +21 dBm At 500MHz
Output P1dB +17 +18.5 dBm At 900MHz
Saturated Output Power +23 dBm At 100MHz
Saturated Output Power +22.5 dBm At 500MHz
Saturated Output Power +20.5 dBm At 900MHz
Reverse Isolation 20 dB
Thermal
ThetaJC 114.9 °C/W ICC =100mA, PDISS =0.555W, TAMB =85°C,
TJ =149°C
No RF Input/Output
Mean Time To Failure 2170 years TAMB =+85°C
ThetaJC 114.05 °C/W ICC =120mA, PDISS =0.702W, TAMB =85°C,
TJ =165°C
No RF Input/Output
Mean Time To Failure 2170 years TAMB =+85°C
Power Supply
Device Voltage (VD) 5.5 V On pin 8, ICC =100mA
5.0 V On pin 8, ICC =40mA
Operating Current Range 40 100 120 mA VCC =9.0V, RC =30Ω

3-2 Rev C6 051025

 RF2312
Specification
Parameter Unit Condition
Min. Typ. Max.
T=25°C, VCC =9V, Freq = 900 MHz,
Overall (75Ω) RC =30Ω, 75Ω System
Frequency Range DC to 2500 MHz 3dB Bandwidth
Gain 14.5 16 dB
Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30°C to +70°C.
4.2 4.8 dB From 300MHz to 1000MHz, -30°C to +70°C.
Input VSWR 1.3:1 2:1 From 50MHz to 900MHz, -30°C to +70°C.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 1.2:1 1.75:1 From 50MHz to 300MHz, -30°C to +70°C.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
1.4:1 2:1 From 300MHz to 500MHz, -30°C to +70°C.
1.5:1 2:1 From 500MHz to 900MHz, -30°C to +70°C.
Output IP3 +36 +38 dBm At 100MHz
Output IP3 +33 +36 dBm At 500MHz
Output IP3 +28 +30 dBm At 900MHz
Output P1dB +21 +22 dBm At 100MHz
Output P1dB +20 +21 dBm At 500MHz
Output P1dB +17 +18.5 dBm At 900MHz
Saturated Output Power +23 dBm At 100MHz
Saturated Output Power +22.5 dBm At 500MHz
Saturated Output Power +20.5 dBm At 900MHz
Reverse Isolation 20 dB
77 Channels 77 Channels to 550MHz at 10dBmV,
33 channels to 760MHz at 0dBmV flat at
DUT input
CSO >86 dBc 61.25MHz
>86 dBc 83.25MHz
76 dBc 193.25MHz
72 dBc 313.2625MHz
64 dBc 547.25MHz
CTB >86 dBc 61.25MHz
>86 dBc 83.25MHz
86 dBc 193.25MHz
84 dBc 313.2625MHz
83 dBc 547.25MHz
CNR 65 66 dB
110 Channels 110 Channels, 10dBmV/channel at input
CSO >86 dBc 61.25MHz
>86 dBc 83.25MHz
76 dBc 193.25MHz
70 dBc 313.2625MHz
64 dBc 547.25MHz
CTB 84 dBc 61.25MHz
86 dBc 83.25MHz
85 dBc 193.25MHz
81 dBc 313.2625MHz
80 dBc 547.25MHz
Cross Modulation 77 dBc 61.25MHz
74 dBc 445.25MHz
CNR 65 66 dB

Rev C6 051025 3-3

 RF2312
Specification
Parameter Unit Condition
Min. Typ. Max.
T=25°C, VCC =9V or 24V, 75Ω System,
Overall (75Ω Push-Pull) RFIN =-10dBm
Frequency Range DC to 150 MHz
Gain 15 dB
Noise Figure 5.0 dB From 5MHz to 150MHz, -30°C to +70°C.
Input VSWR 1.1:1
Output VSWR 1.2:1
Output IP2 +71 dBm At 10MHz
+72 dBm At 30MHz
+74 dBm At 50MHz
Output IP3 +40 dBm At 10MHz
+40 dBm At 30MHz
+40 dBm At 50MHz
Second Harmonic -73 dBc At 10MHz
-65 dBc At 30MHz
-65 dBc At 50MHz

3-4 Rev C6 051025

 RF2312
Pin Function Description Interface Schematic
1 RF IN RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC-
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1kΩ
resistor to ground on this pin reduces the bias level, which may be com-
pensated for by a higher supply voltage to maintain the appropriate
bias level. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC-cou-
pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.
2 GND Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane. Each ground pin should
have a via to the ground plane.
3 GND Same as pin 2.
4 GND Same as pin 2.
5 GND Same as pin 2.
6 GND Same as pin 2.
7 GND Same as pin 2.
8 RF OUT RF output and bias pin. Because DC is present on this pin, a DC-block- RF OUT
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor RC is 30Ω (0.5W) for VCC =9V and
21Ω for VCC =8V. The DC voltage on this pin is typically 6.0V with a RF IN
current of 100mA. In lower power applications the value of RC can be
increased to lower the current and VD on this pin.

Rev C6 051025 3-5

 RF2312
Application Schematic
5MHz to 50MHz Reverse Path
VCC

30 Ω 100 nF 100 nF

RS
10 μH
10 nF 1 - 2 kΩ
RF IN 1 8 RF OUT
10 nF
2 7

3 6

4 5

NOTE 1:
Optional resistor RS can be used to maintain the correct bias level at higher supply voltages. This is used to
increase output capability or linearity for signals with high crest factors.

Application Schematic
10dB Gain
VCC= 9 - 12 V

C3 R2 R1 = 21 - 30 Ω
10 nF 470 Ω

C1 R5 L1
220 pF 1 - 2 kΩ 330 nH
RF IN 1 8 RF OUT
C2
2 7 220 pF

C4 R6 3 6 R7 C5
TBD 7.5 Ω 7.5 Ω TBD
4 5

R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2
and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedance matching. R6 and
R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating
frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness.

3-6 Rev C6 051025

 RF2312
Application Schematic
Push-Pull Standard Voltage
P1

1 GND

CON3

120 Ω 120 Ω 120 Ω 120 Ω 0.1 uF

V
U1

1 8

616PT-
1030 2 7
F EDGE

3 6

4 5
RF2312

616PT-
1030
F EDGE
U2
V

1 8

2 7

3 6

4 5
RF2312

Rev C6 051025 3-7

 RF2312
Application Schematic
Push-Pull 24V
P1

1 GND

CON3

120 Ω 120 Ω 120 Ω 120 Ω 0.1 uF

U1
2400 Ω 10 uH

1 8

10 nF 10 nF
616PT- 2 7 616PT-
1030 1030
F EDGE F EDGE
3 6
0.1 uF
4 5
RF2312
10 nF
47 nF

2400 Ω
63 nF

10 uH

120 Ω 120 Ω 120 Ω 120 Ω

U2
10 nF
1 8

2 7

3 6

4 5
RF2312

3-8 Rev C6 051025

 RF2312
Evaluation Board Schematic - 50Ω
(Download Bill of Materials from www.rfmd.com.)
P1 H3M

P1-1 1 VCC (9 V)

2 GND P1-1
R1 R2 R3 R4 C2 C4
3 NC 120Ω 120Ω 120Ω 120Ω 100 nF 100 nF

C1 L1
OUT
220 pF 330 nH
J1 micro
strip J2
1 8
SMA micro
strip SMA
C3
2 7 220 pF

3 6

4 5

2312400A

Evaluation Board Schematic - 75Ω

P1-1

P1
C3
P1-1 1 VCC 0.1 uF
2 GND
R4 R1 R2 R3
3 NC
120Ω 120Ω 120Ω 120Ω
CON3
C1 L1
OUT
J1 1 nF 1000 nH J2
micro
strip micro
strip
F CONN 1 8 F CONN
(75Ω) C3 (75Ω)
2 7 1 nF

3 6

4 5

2312401-

NOTE: For 5V applications, R1 to R4 may be removed (shorted). This will result in degraded distortion performance.

Rev C6 051025 3-9

 RF2312
Evaluation Board Layout - 50Ω
2.02” x 2.02”
Board Thickness 0.031”, Board Material FR-4

3-10 Rev C6 051025

 RF2312
Evaluation Board Layout - 75Ω
Standard Voltage
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4

Rev C6 051025 3-11

 RF2312
Evaluation Board Layout - 75Ω
Push-Pull, Standard Voltage
1.70” x 1.50”
Board Thickness 0.062”, Board Material FR-4

3-12 Rev C6 051025

 RF2312
Evaluation Board Layout - 75Ω
Push-Pull, 24V
1.70” x 1.50”
Board Thickness 0.062”, Board Material FR-4

Rev C6 051025 3-13

 RF2312
POUT versus PIN ICC versus Device Voltage
500 MHz (Pin 8)
20.0 140.0
Rs=1k

120.0 No Rs

15.0
100.0
POUT (dBm)

80.0

ICC (mA)
10.0

60.0

40.0
5.0

20.0

0.0 0.0
-15.0 -10.0 -5.0 0.0 5.0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
PIN (dBm) Device Voltage (V)

Output Third Order Intercept Point (OIP3) versus PIN Output P1dB versus Frequency
500 MHz
50.0 25.0
Vcc=5.0V, Rc=22
Vcc=6.0V, Rc=22
Vcc=7.0V, Rc=22
Vcc=8.0V, Rc=22
40.0 20.0 Vcc=9.0V, Rc=30
Vcc=11.0V, Rc=30, Rs=1k
Output P1dB (dBm)
Output IP3 (dBm)

30.0 15.0

20.0 10.0

10.0 5.0

0.0 0.0
-15.0 -10.0 -5.0 0.0 5.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0
PIN (dBm) Frequency (MHz)

IM3 Products versus POUT

500/501 MHz
70.0

60.0

50.0
IM3 Products (-dBc)

40.0

30.0

20.0

10.0

0.0
5.0 10.0 15.0 20.0 25.0
POUT (dBc)

3-14 Rev C6 051025

 RF2312
CH1 S 11 1 U FS 4_: 53.809 -24.182 3.464 pF CH1 S 21 log MAG 10 dB/ REF 0 dB 4_: 14.454 dB
1 900.000 000 MHz 1 900.000 000 MHz

1_: 97.188
-1.5742 1_: 15.372 dB
C2 50 MHz 50 MHz
C2
2_: 93.512 2_: 15.307 dB
-13.215 450 MHz
450 MHz
3_: 84.16 3_: 15.184 dB
-22.945 900 MHz
900 MHz 4

1 2 3

4 1
2
3

START .300 000 MHz STOP 3 000.000 000 MHz

START .300 000 MHz STOP 3 000.000 000 MHz

CH1 S 22 1 U FS 4_: 19.802 -16.739 5.0042 pF CH1 S 12 log MAG 10 dB/ REF 0 dB 4_:-17.966 dB
1 900.000 000 MHz 1 900.000 000 MHz

1_: 115.2
-6.6211 1_:-19.908 dB
C2 50 MHz 50 MHz
C2
2_: 87.551 2_:-19.87 dB
-42.652
450 MHz 450 MHz

3_: 52.43 3_:-19.554 dB

-44.855 900 MHz
900 MHz

4
2

4
3

1 2 3

START .300 000 MHz STOP 3 000.000 000 MHz

START .300 000 MHz STOP 3 000.000 000 MHz

Rev C6 051025 3-15

 RF2312

75 Ohms, ICC = 100 mA, Temp = 25°C 75 Ohms, ICC = 110 mA, Temp = 25°C

1.0

1.0
Swp Max Swp Max

0.8

0.8
2.001GHz 2.001GHz
6

6
0.

0.
0

0
2.

2.
4 4
0. 0.
0 0
3. 3.

0 0
4. 4.
5.0 5.0
0.2 0.2

10.0 10.0

10.0

10.0
0.2

0.4

0.6

0.8

1.0

2.0

3.0

4.0
5.0

0.2

0.4

0.6

0.8

1.0

2.0

3.0

4.0
5.0
0

0
S[2,2] S[2,2]
-10.0 -10.0
S[1,1] S[1,1]
2 2
-0. 0 -0. 0
-5. -5.
.0 .0
-4 -4
0 . .0
-3 -3
.4 .4
-0 -0
.0

.0
-2

-2
.6

.6
-0

-0
-0.8

-0.8
Swp Min Swp Min
-1.0

-1.0
0.001GHz 0.001GHz

3-16 Rev C6 051025